SEMIKRON SEMIX353GB126V1 IGBT Power Module

SEMIKRON SEMIX353GB126V1 IGBT Power Module

Rated Voltage V_CES: 1200V (maximum transient withstand capability of IGBT)
Rated Current I_T(RMS): ~600A (terminal temperature 80°C)
Module Structure: Three-phase bridge (Six-pack) or similar configuration (for step-up applications)
Chip Technology: Trench IGBT, VCE(sat) positive temperature coefficient
Environment/Package: SEMIX 3s package, suitable for industrial environments
Storage/Operating Temperature Range: Module T_stg: -40…125°C

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2. Original packaging.

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4. Original and brand new

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